Nitride semiconductor light-emitting device

Details Nitride semiconductor light-emitting device Nitride semiconductor light-emitting device

2006-10-03

2006-10-03

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S102000, C257S103000

Reexamination Certificate

active

07115914

ABSTRACT:
A nitride semiconductor light-emitting device includes a first conductive nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer, and having at least one quantum well layer and at least one quantum barrier layer alternatively laminated; and a second conductive nitride semiconductor layer formed on the active layer, wherein at least one of the quantum well layer and quantum barrier layer in the active layer is doped with elemental Al in a concentration of less than 1%.

REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 2002/0179923 (2002-12-01), Morita et al.
patent: 2002/0195054 (2002-12-01), Harafuji et al.
patent: 2001-237457 (2001-08-01), None
patent: 2003-83011 (2003-10-01), None
patent: 03/103062 (2003-12-01), None

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