Nitride semiconductor light-emitting device

Details Nitride semiconductor light-emitting device Nitride semiconductor light-emitting device

1995-11-30

1998-07-07

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 76, 257 97, 257103, 257 13, 372 45, H01L 3300

Patent

active

057773505

ABSTRACT:
A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.

REFERENCES:
patent: 5602418 (1997-02-01), Imai et al.
patent: 5652434 (1997-07-01), Nakamura et al.
patent: 5670798 (1997-09-01), Schetzina
Jpn. J. Appl. Phys. vol. 34(1995) pp. L797-L799.
Jpn. J. Appl. Phys. vol. 34(1995) pp. L1332-L1335.
Appl. Phys. Lett. 67(13). 25 Sep. 1995.

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