Nitride semiconductor LED using a hybrid buffer layer and a...

Details Nitride semiconductor LED using a hybrid buffer layer and a... Nitride semiconductor LED using a hybrid buffer layer and a...

2009-02-05

2011-11-01

Lebentritt, Michael (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S022000, C257SE21121

Reexamination Certificate

active

08048701

ABSTRACT:
The present invention relates to a nitride semiconductor light emitting device using a hybrid buffer layer and a method for fabricating the same which can minimize the lattice mismatch between a buffer layer and a nitride semiconductor. The method for fabricating the nitride semiconductor light emitting device using the hybrid buffer layer includes a first step of forming an AlxGa1-xN(0≦x<1) layer on a substrate, a second step of forming a three-dimensional crystal seed layer made of a material included in a general formula of AlxGa1-xN(0≦x<1) and AlOyNzon the substrate by recrystallizing the substrate with the AlxGa1-xN(0≦x<1) layer thereon, and a third step of forming an AlN nanostructure by annealing the substrate subjected to the second step at NH3gas atmosphere, thus forming a hybrid buffer layer composed of the three-dimensional crystal seed layer and the AlN nanostructure on the substrate.

REFERENCES:
patent: 2006/0191474 (2006-08-01), Chen et al.
patent: 2008/0251890 (2008-10-01), Park
patent: 2008/0315222 (2008-12-01), Kim et al.
patent: 2009/0166649 (2009-07-01), Lee
patent: 2002-118287 (2002-04-01), None
patent: 2008-16591 (2008-01-01), None
patent: 10-2005-0096509 (2005-10-01), None

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