Nitride semiconductor LED and fabrication method thereof

Details Nitride semiconductor LED and fabrication method thereof Nitride semiconductor LED and fabrication method thereof

2005-07-06

2010-12-07

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S094000

Reexamination Certificate

active

07847279

ABSTRACT:
A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1-xN layer formed on the first electrode layer; an active layer formed on the InxGa1-xN layer; a first P—GaN layer formed on the active layer; a second electrode layer formed on the first P—GaN layer; a second P—GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P—GaN layer.

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