Nitride semiconductor LED and fabrication method thereof

Details Nitride semiconductor LED and fabrication method thereof Nitride semiconductor LED and fabrication method thereof

2003-08-19

2009-11-10

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S094000, C257SE33028

Reexamination Certificate

active

07615772

ABSTRACT:
A nitride semiconductor LED includes a substrate; a GaN-based buffer layer formed on the substrate; AlyGa1−yN/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (where 0≦y≦1); a first electrode layer of an n-GaN layer formed on the upper AlyGa1−yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.

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English computer translation of JP-2001-274096, provided on IDS filed Sep. 27, 2006.

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