Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2005-05-10
2005-05-10
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S079000, C438S030000, C438S046000
Reexamination Certificate
active
06891201
ABSTRACT:
A nitride semiconductor light emitting device includes a processed substrate (101a) including a groove and a hill formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer (102) covering the groove and the hill of the processed substrate, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the nitride semiconductor underlayer. A current-constricting portion of the light emitting device structure is formed above a region more than 1 μm away from the center of the groove in the width direction and more than 1 μm away from the center of the hill in the width direction.
REFERENCES:
patent: 08-064870 (1996-08-01), None
patent: 2000-021789 (2000-01-01), None
patent: 2000-124500 (2000-04-01), None
patent: 2000-183462 (2000-06-01), None
Shin-ichi Nagahama et al., Jpn. J. Appl. Phys., vol. 39 (2000), “High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates” Part 2, No. 7A, Jul. 1, 2000, pp L647-L650.
Ito Shigetoshi
Taneya Mototaka
Tsuda Yuhzoh
Yamasaki Yukio
Yuasa Takayuki
Morrison & Foerster / LLP
Pham Long
Sharp Kabushiki Kaisha
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