Nitride semiconductor laser element and method for...

Details Nitride semiconductor laser element and method for... Nitride semiconductor laser element and method for...

2006-10-24

2008-10-21

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

07440482

ABSTRACT:
A nitride semiconductor laser element, comprises a substrate, a nitride semiconductor layer laminated over said substrate and having a ridge on its surface, and an electrode, wherein a first protective film is formed so that an air gap is located on at least part of the region extending from the side of the ridge to the surface of the nitride semiconductor layer on both sides of said ridge.

REFERENCES:
patent: 6597716 (2003-07-01), Takatani
patent: 2002/0110945 (2002-08-01), Kuramata et al.
patent: 2005/0111506 (2005-05-01), Ohta et al.
patent: 2005/0218414 (2005-10-01), Ueda et al.
patent: 2007/0290230 (2007-12-01), Kawaguchi et al.
patent: H10-270792 (1998-10-01), None
patent: 2005-158941 (2005-06-01), None
patent: 2005-166718 (2005-06-01), None

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