Nitride semiconductor laser element and fabrication method...

Details Nitride semiconductor laser element and fabrication method... Nitride semiconductor laser element and fabrication method...

2006-12-11

2010-11-30

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S012000, C257S014000, C257S022000, C257S097000, C257S101000, C257S103000, C257SE29079, C257SE33005, C257SE33023, C372S039000, C372S045010, C372S046010

Reexamination Certificate

active

07842956

ABSTRACT:
On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.

REFERENCES:
patent: 6677173 (2004-01-01), Ota
patent: 7072374 (2006-07-01), Matsumura
patent: 7496124 (2009-02-01), Kozaki et al.
patent: 2004/0238810 (2004-12-01), Dwilinski et al.
patent: 11-330610 (1999-11-01), None
patent: 2000-114664 (2000-04-01), None
patent: 2006-237475 (2006-09-01), None

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