Nitride semiconductor laser element and external-cavity...

Details Nitride semiconductor laser element and external-cavity... Nitride semiconductor laser element and external-cavity...

2011-06-28

2011-06-28

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S102000, C372S108000

Reexamination Certificate

active

07970035

ABSTRACT:
Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less.

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