Nitride semiconductor laser element

Details Nitride semiconductor laser element Nitride semiconductor laser element

2008-02-19

2010-02-23

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S049010, C372S098000, C372S099000

Reexamination Certificate

active

07668218

ABSTRACT:
The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride semiconductor layers; a cavity end face provided to the nitride semiconductor structure; and a protective film having a hexagonal crystal structure, and having a first region provided on a first crystal surface of the nitride semiconductor structure in the cavity end face and a second region provided on a second crystal surface in the surface of at least one of the first and second nitride semiconductor layer, the first and second regions of the protective film are oriented in the same axial direction as that of the respective first and second crystal surfaces.

REFERENCES:
patent: 7057211 (2006-06-01), Dwilinski et al.
patent: 7315559 (2008-01-01), Dwilinski et al.
patent: 2002/0094002 (2002-07-01), Amano et al.
patent: 2003/0091079 (2003-05-01), Yokota
patent: 2003/0128729 (2003-07-01), Matsumura
patent: 2005/0059181 (2005-03-01), Yamane et al.
patent: 2007/0025231 (2007-02-01), Ochiai et al.
patent: 2007/0054431 (2007-03-01), Kamikawa et al.
patent: 2007/0080368 (2007-04-01), Kamikawa et al.
patent: 2007/0147448 (2007-06-01), Bessho et al.
patent: 2007/0205424 (2007-09-01), Kamikawa et al.
patent: 2007/0210324 (2007-09-01), Kawaguchi et al.
patent: 2007/0298528 (2007-12-01), Yamane et al.
patent: S63-164286 (1988-07-01), None
patent: H04-079279 (1992-03-01), None
patent: H09-162496 (1997-06-01), None
patent: H09-162497 (1997-06-01), None
patent: H09-283843 (1997-10-01), None
patent: H10-070338 (1998-03-01), None
patent: 2002-100830 (2002-04-01), None
patent: 2002-329926 (2002-11-01), None
patent: 2002-335053 (2002-11-01), None
patent: 2004-327637 (2004-11-01), None
patent: 2005-079406 (2005-03-01), None
patent: 2005-101457 (2005-04-01), None
patent: 2006-228892 (2006-08-01), None
patent: 2007-059732 (2007-03-01), None
patent: 2007-103814 (2007-04-01), None
patent: 2007-150004 (2007-06-01), None
patent: 2007-201412 (2007-08-01), None
patent: 2007-273951 (2007-10-01), None
patent: 2007-273953 (2007-10-01), None
patent: WO-03/036771 (2003-05-01), None

Affiliated with

Also associated with

Rating

Nitride semiconductor laser element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor laser element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor laser element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4174655