Nitride semiconductor laser element

Details Nitride semiconductor laser element Nitride semiconductor laser element

2004-07-09

2009-10-27

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S044010, C372S045010, C372S049010

Reexamination Certificate

active

07609737

ABSTRACT:
A nitride semiconductor laser device comprises a nitride semiconductor substrate (101); a nitride semiconductor lamination structure that has an n-type semiconductor layer (102), an active layer (104) and a p-type semiconductor layer (103) laminated on or above the nitride semiconductor substrate (101), and has a stripe-shaped waveguide region for laser light; and end surface protective films (110) on the both end surfaces substantially perpendicular to the waveguide region. In the nitride semiconductor laser device, the nitride semiconductor substrate (101) has a luminescent radiation region (112) that absorbs light emitted from the active layer (104) and emits luminescent radiation with a wavelength longer than the wavelength of the emitted light, and the end surface protective films (110) have a high reflectivity for the wavelength of the luminescent radiation from the luminescent radiation region (112). Accordingly, a nitride semiconductor laser device that does not improperly operate and has excellent FFP is provided.

REFERENCES:
patent: 4607368 (1986-08-01), Hori
patent: 5247536 (1993-09-01), Kinoshita
patent: 6057565 (2000-05-01), Yoshida et al.
patent: 2002/0024981 (2002-02-01), Tojo et al.
patent: 2002/0053676 (2002-05-01), Kozaki
patent: 2002/0141321 (2002-10-01), Wada et al.
patent: 2002/0189532 (2002-12-01), Motoki et al.
patent: 2004/0105473 (2004-06-01), Tojo et al.
patent: 2004/0213315 (2004-10-01), Kume et al.
patent: 2005/0042787 (2005-02-01), Ito et al.
patent: 0 949 731 (1999-10-01), None
patent: 8-191171 (1996-07-01), None
patent: 11-154770 (1999-06-01), None
patent: 2000-196199 (2000-07-01), None
patent: 2002-76518 (2002-03-01), None
patent: 2002-100830 (2002-04-01), None
patent: 2002-280663 (2002-09-01), None
patent: 2002-314198 (2002-10-01), None
patent: 2002-373864 (2002-12-01), None
patent: 2003-069156 (2003-03-01), None
patent: 2003-133649 (2003-05-01), None
patent: 2003-133650 (2003-05-01), None

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