Nitride semiconductor laser diode and method for...

Details Nitride semiconductor laser diode and method for... Nitride semiconductor laser diode and method for...

2006-07-11

2006-07-11

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S029000, C438S039000

Reexamination Certificate

active

07074633

ABSTRACT:
Provided is a nitride semiconductor laser diode and a method for manufacturing the same. The method includes the steps of: a) forming a nitride semiconductor layer by orderly evaporating a substrate, an undoped GaN layer, an n-type layer, a multi-quantum well (MQW), an electron blocking layer (EBL) and a p-type layer; b) eliminating the substrate and the undoped GaN layer in the nitride semiconductor layer by lapping the substrate and the undoped GaN layer; and c) forming a ridge structure on the n-type layer. According to the present invention, a ridge structure is easily formed on an n-type layer, I-V characteristics are improved, heat generation is suppressed and an operational lifetime is extended.

REFERENCES:
patent: 6455340 (2002-09-01), Chua et al.
patent: 6757314 (2004-06-01), Kneissl et al.
patent: 6800500 (2004-10-01), Coman et al.
patent: 6815312 (2004-11-01), Furukawa et al.
patent: 6900069 (2005-05-01), Kaneko et al.

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