Nitride semiconductor laser device having current blocking...

Details Nitride semiconductor laser device having current blocking... Nitride semiconductor laser device having current blocking...

2007-04-25

2010-10-19

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010

Reexamination Certificate

active

07817692

ABSTRACT:
A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer30that is made of InxAlyGa1-x-yN (0≦x≦0.1, 0.5≦y≦1, 0.5≦x+y≦1) and has a stripe-shaped window32formed therein to pass current flow.

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Notice of Allowance and Allowability mailed Jan. 25, 2007 in U.S. Appl. No. 10/876,695 now U.S. Patent No. 7,227,879.
Election/Restriction mailed Oct. 2, 2006 in U.S. Appl. No. 10/876,695 now U.S. Patent No. 7,227,879.
Interview Summary from Jan. 19, 2007 interview in U.S. Appl. No. 10/876,695 now U.S. Patent No. 7,227,879.

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