Nitride semiconductor laser device chip and laser apparatus...

Details Nitride semiconductor laser device chip and laser apparatus... Nitride semiconductor laser device chip and laser apparatus...

2006-10-17

2006-10-17

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

07123640

ABSTRACT:
A nitride semiconductor laser device chip has a nitride semiconductor stacked-layered structure including an n-type layer, an active layer and a p-type layer stacked successively on a main surface of a nitride semiconductor substrate. A ridge stripe structure is formed in a portion of the p-type layer. The chip has a length L1of more than 500 μm in a longitudinal direction of the stripe structure and a length L2of more than 200 μm in a width direction of the stripe structure, and L1/L2is more than 2.5.

REFERENCES:
patent: 6925101 (2005-08-01), Matsumura
patent: 2002/0039374 (2002-04-01), Onomura et al.
patent: 2002/0105981 (2002-08-01), Gen-ei et al.
patent: 2003/0210720 (2003-11-01), Reid
patent: 11-340571 (1999-12-01), None

Affiliated with

Also associated with

Rating

Nitride semiconductor laser device chip and laser apparatus... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor laser device chip and laser apparatus..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor laser device chip and laser apparatus... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3668161