Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-05-10
2005-05-10
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S013000, C257S014000, C257S017000, C257S021000, C257S023000, C257S079000, C257S082000, C257S094000, C257S098000, C257S101000, C257S102000, C257S103000, C257S179000, C257S184000
Reexamination Certificate
active
06891189
ABSTRACT:
A nitride semiconductor laser device includes a nitride semiconductor substrate, and a layered portion corresponding to a nitride semiconductor film grown on the nitride semiconductor substrate, the layered portion including an n-type layer and a p-type layer and a light emitting layer posed between the n- and p-type layers, of the n- and p-type layers a layer opposite to the nitride semiconductor substrate with the light emitting layer opposed therebetween serving as an upper layer having a stripe of 1.9 μm to 3.0 μn in width, the light emitting layer and the upper layer having an interface distant from a bottom of the stripe by 0 μm to 0.2 μm.
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Ito Shigetoshi
Tsuda Yuhzoh
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
Soward Ida M.
Zarabian Amir
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