Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-03-29
2005-03-29
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S044010
Reexamination Certificate
active
06873635
ABSTRACT:
A nitride semiconductor laser device includes a first-conductivity-type cladding layer formed of a nitride semiconductor material; an active layer formed of a nitride semiconductor material; and a second-conductivity-type cladding layer formed of a nitride semiconductor material. The first-conductivity-type cladding layer has a first main surface and a second main surface, the first main surfaces being closer to the active layer from the second main surface, and includes a first-conductivity-type first cladding layer and a first-conductivity-type second cladding layer having a different composition from that of the first-conductivity-type first cladding layer, which are provided in this order from the first main surface. The first-conductivity-type first cladding layer has a refractive index lower than that of the first-conductivity-type second cladding layer.
REFERENCES:
patent: 6215803 (2001-04-01), Hata
patent: 10-270792 (1998-10-01), None
Nakamura, S. et al. (1996). “Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes”Appl. Phys. Lett. 69 (26): 4056-4058.
Ito Shigetoshi
Yamasaki Yukio
Harvey Minsun Oh
Jackson Cornelius H
Sharp Kabushiki Kaisha
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