Nitride semiconductor laser device and nitride semiconductor...

Details Nitride semiconductor laser device and nitride semiconductor... Nitride semiconductor laser device and nitride semiconductor...

2005-03-31

2008-08-05

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S094000, C257SE33027

Reexamination Certificate

active

07408199

ABSTRACT:
A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivity type that is different from said first conductivity type, and on the surface of which is formed a stripe ridge; said principal face of said nitride semiconductor substrate having an off angle a (θa) with respect to a reference crystal plane, in at least a direction substantially parallel to said stripe ridge.

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