Coherent light generators – Particular pumping means – Electrical
Reexamination Certificate
2010-06-28
2011-11-15
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular pumping means
Electrical
C372S081000
Reexamination Certificate
active
08059691
ABSTRACT:
A method of producing a nitride semiconductor laser device includes forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.
REFERENCES:
patent: 6850547 (2005-02-01), Goto
patent: 7123640 (2006-10-01), Hanaoka
patent: 7257140 (2007-08-01), Yoneda
patent: 2002/0001327 (2002-01-01), Goto
patent: 2004/0002233 (2004-01-01), Advocate, Jr. et al.
patent: 2004/0013149 (2004-01-01), Hanaoka
patent: 2004/0071176 (2004-04-01), Ohta et al.
patent: 2007/0195851 (2007-08-01), Chae et al.
patent: 2008/0083996 (2008-04-01), Kudo
patent: 55-87452 (1980-07-01), None
patent: 60-18928 (1985-01-01), None
patent: 63-173381 (1988-07-01), None
patent: 3-16111 (1991-01-01), None
patent: 3-225888 (1991-10-01), None
patent: 06-079172 (1994-11-01), None
patent: 8-327859 (1996-12-01), None
patent: 10-242581 (1998-09-01), None
patent: 2002-016313 (2002-01-01), None
patent: 2003/243765 (2003-08-01), None
patent: 2004-055683 (2004-02-01), None
patent: 2004-95859 (2004-03-01), None
patent: 2004-356454 (2004-12-01), None
Notice of Allowance dated Dec. 21, 2010 in corresponding Japanese Patent Application No. 2006-069350 and English translation thereof.
Japanese Office Action dated Jan. 5, 2010 corresponding to Japanese Application No. 069350/2006 and English translation thereof.
US Office Action dated Dec. 17, 2010 issued in related U.S. Appl. No. 12/805,750.
Harness & Dickey & Pierce P.L.C.
Rodriguez Armando
Sharp Kabushiki Kaisha
LandOfFree
Nitride semiconductor laser device and method of producing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride semiconductor laser device and method of producing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor laser device and method of producing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4259545