Nitride semiconductor laser device and method of producing...

Details Nitride semiconductor laser device and method of producing... Nitride semiconductor laser device and method of producing...

2008-10-21

2010-06-08

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S054000

Reexamination Certificate

active

07733935

ABSTRACT:
A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer under the active layer includes a stripe-like trench; the semiconductor multi-layer structure includes a stripe-like optical cavity arranged along the stripe-like trench; the stripe-like trench has a narrower width in its both end regions compared to its central main region; and the active layer is formed of a nitride semiconductor containing In.

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patent: 5395793 (1995-03-01), Charbonneau et al.
patent: 2001/0017375 (2001-08-01), Hirata et al.
patent: 58-225681 (1983-12-01), None
patent: 07-135374 (1995-05-01), None
patent: 2003-198057 (2003-07-01), None

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