Nitride semiconductor laser device and method for...

Details Nitride semiconductor laser device and method for... Nitride semiconductor laser device and method for...

2006-03-14

2006-03-14

Harvey, Minsun Oh (Department: 2828)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C372S045010, C372S046010

Reexamination Certificate

active

07011982

ABSTRACT:
A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate which has a cut-out portion. A laser facet of a multi-layer body is located near the cut-out portion of the substrate.

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