Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-06-06
2006-06-06
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S099000, C257S103000
Reexamination Certificate
active
07057211
ABSTRACT:
The object of this invention is to provide a high-output type nitride semiconductor laser device comprising a pair of end faces of a resonator.The nitride semiconductor laser device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and a resonator, provided with an active layer comprising nitride semiconductor containing In therebetween, wherein at least light emitting end face of the resonator is covered with an end face film of single crystal AlxGa1-xN (0≦x≦1) formed at a low temperature not causing damage to the active layer comprising nitride semiconductor containing In.
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Doradzinski Roman
Dwilinski Robert
Garczynski Jerzy
Kanbara Yasuo
Sierzputowski Leszek
Ammono SP. ZO.O
Morrison & Foerster / LLP
Nichia Corporation
Schillinger Laura M.
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