Nitride semiconductor laser device and fabricating method...

Details Nitride semiconductor laser device and fabricating method... Nitride semiconductor laser device and fabricating method...

2006-06-06

2006-06-06

Menefee, James (Department: 2828)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S022000

Reexamination Certificate

active

07056756

ABSTRACT:
A method for fabricating a nitride semiconductor laser device including a step to expose surfaces of an n-type nitride semiconductor layer (102) and a p-type nitride semiconductor layer (108); a step to cover the surface of the multi-layered semiconductor; with an insulating film (109) that has a thickness greater than the difference in levels between the exposed surface of the n-type nitride semiconductor layer (102) and the outermost surface of the p-type nitride semiconductor layer (108); a step to flatten the surface of the insulating film (109); and a step to form an n-type electrode (111) and a p-type electrode (110) electrically connected to the n-type nitride semiconductor layer (102) and the p-type nitride semiconductor layer (108), respectively. This method makes it possible to obtain a nitride semiconductor laser device that is highly reliable and exhibits an excellent heat diffusing property.

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Machine Translation of JP 2000-233012 (original published Sep. 8, 2000).

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