Nitride semiconductor laser device

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S034000, C372S098000

Reexamination Certificate

active

07573924

ABSTRACT:
A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.

REFERENCES:
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patent: 5233622 (1993-08-01), Iwamoto
patent: 5770473 (1998-06-01), Hall et al.
patent: 6396023 (2002-05-01), Aikiyo
patent: 6847660 (2005-01-01), Morikawa et al.
patent: 1406404 (2003-03-01), None
patent: 60-186076 (1985-09-01), None
patent: 10-313147 (1998-11-01), None

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