Nitride semiconductor laser device

Details Nitride semiconductor laser device Nitride semiconductor laser device

2005-05-17

2005-05-17

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S046012, C372S049010, C372S065000

Reexamination Certificate

active

06895029

ABSTRACT:
A nitride semiconductor laser chip103is fixed to a submount102serving as a mount member with solder107.The submount102is made of a material having a thermal expansion coefficient higher than that of a nitride semiconductor substrate, and has a thickness equal to or greater than 1.2 times the thickness of the layered nitride semiconductor structure composed of an n-type GaN substrate1and a layered nitride semiconductor portion2.Between the n-type GaN substrate1and the submount102is laid a metal film having a thickness of from 1 to 50 μm.

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