Nitride semiconductor laser device

Details Nitride semiconductor laser device Nitride semiconductor laser device

2008-09-19

2011-10-04

Park, Kinam (Department: 2828)

Coherent light generators

Particular temperature control

C372S036000, C372S050100, C372S050120

Reexamination Certificate

active

08031751

ABSTRACT:
The present invention relates to a nitride semiconductor laser device having a structure in which two or more of nitride semiconductor laser elements, having at least a first electrode on a first main surface of a first conductive type conductive substrate, having at least a first conductive type nitride semiconductor layer, an active layer, a second conductive type nitride semiconductor layer, and a second electrode on a second main surface of the conductive substrate, and having a stripe-waveguide structure parallel to the first main surface, are arranged in a direction parallel to the first main surface and a direction perpendicular to the direction of light that is emitted from the stripe waveguide structure in the nitride semiconductor laser device, and the first sub-mount and the first electrode of the nitride semiconductor laser element are electrically and heat-conductively connected, and the second sub-mount and the second electrode of the nitride semiconductor laser element are electrically and heat-conductively connected.

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