Nitride semiconductor laser device

Details Nitride semiconductor laser device Nitride semiconductor laser device

2008-04-09

2010-10-12

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S045011, C257S079000

Reexamination Certificate

active

07813397

ABSTRACT:
A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an active layer, and a nitride semiconductor layer having a second conductivity type that is different from the first conductivity type, and being formed a stripe ridge on the surface thereof. The (000-1) face and an inclined face other than the (000-1) face are exposed on a second principal face of the nitride semiconductor substrate. The inclined face other than the (000-1) face represents no less than 0.5% over the surface area of the second principal face.

REFERENCES:
patent: 2001/0030329 (2001-10-01), Ueta et al.
patent: 2002/0027933 (2002-03-01), Tanabe et al.
patent: 2002/0054617 (2002-05-01), Tsuda et al.
patent: 2003/0001238 (2003-01-01), Ban
patent: 2003/0037722 (2003-02-01), Kiyoku et al.
patent: 2003/0205717 (2003-11-01), Khare et al.
patent: 2004/0206299 (2004-10-01), Tadamoto et al.
patent: 2004/0238810 (2004-12-01), Dwilinski et al.
patent: 2005/0026398 (2005-02-01), Nakamura
patent: 2005/0030994 (2005-02-01), Kozaki et al.
patent: 2005/0042787 (2005-02-01), Ito et al.
patent: 2006/0078024 (2006-04-01), Matsumura et al.
patent: 2006/0213429 (2006-09-01), Motoki et al.
patent: 2008/0080578 (2008-04-01), Kamikawa et al.
patent: 2000-156348 (2000-06-01), None
patent: 2000-223743 (2000-08-01), None
patent: 2000-331937 (2000-11-01), None
patent: 2001-057463 (2001-02-01), None
patent: 2002-016000 (2002-01-01), None
patent: 2002-094189 (2002-03-01), None
patent: 2003-115641 (2003-04-01), None
patent: 2003-133587 (2003-05-01), None
patent: 2003-133650 (2003-05-01), None
patent: 2003-183100 (2003-07-01), None
patent: 2004-071657 (2004-03-01), None
patent: 2005-056979 (2005-03-01), None
patent: WO-03/036771 (2003-05-01), None

Affiliated with

Also associated with

Rating

Nitride semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4185736