Nitride semiconductor laser device

Details Nitride semiconductor laser device Nitride semiconductor laser device

2011-01-25

2011-01-25

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046012

Reexamination Certificate

active

07876798

ABSTRACT:
A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate.

REFERENCES:
patent: 6266355 (2001-07-01), Sverdlov
patent: 7397834 (2008-07-01), Kozaki et al.
patent: 05-343742 (1993-12-01), None
patent: 06-283758 (1994-10-01), None

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