Nitride semiconductor laser chip and fabrication method thereof

Details Nitride semiconductor laser chip and fabrication method thereof Nitride semiconductor laser chip and fabrication method thereof

2011-08-09

2011-08-09

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S054000

Reexamination Certificate

active

07995632

ABSTRACT:
In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.

REFERENCES:
patent: 6737678 (2004-05-01), Kawakami et al.
patent: 2001/0030328 (2001-10-01), Ishida
patent: 2001/0048114 (2001-12-01), Morita et al.
patent: 2005/0116243 (2005-06-01), Mochida
patent: 2007/0121692 (2007-05-01), Kawakami et al.
patent: 62-190892 (1987-08-01), None
patent: 08-213692 (1996-08-01), None
patent: 10-051029 (1998-02-01), None
patent: 2007-180522 (2007-07-01), None

Affiliated with

Also associated with

Rating

Nitride semiconductor laser chip and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor laser chip and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor laser chip and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2619387