Nitride semiconductor laser and method for fabricating the same

Details Nitride semiconductor laser and method for fabricating the same Nitride semiconductor laser and method for fabricating the same

2008-03-04

2008-03-04

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S042000, C438S044000, C438S039000

Reexamination Certificate

active

10547968

ABSTRACT:
A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively split chip substrates.

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International Search Report for corresponding PCT/JP2004/003042 mailed, Jun. 22, 2004.
Co-pending U.S. Appl. No. 10/537,868 (claims attached).

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