Nitride semiconductor laser

Details Nitride semiconductor laser Nitride semiconductor laser

2006-11-14

2006-11-14

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S745000, C257S012000, C438S040000, C438S045000, C438S046000

Reexamination Certificate

active

07135772

ABSTRACT:
The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.

REFERENCES:
patent: 5834331 (1998-11-01), Razeghi
patent: 6388275 (2002-05-01), Kano
patent: 2003/0045103 (2003-03-01), Suzuki et al.
patent: 1018770 (2000-07-01), None
patent: 03-265122 (1991-11-01), None
patent: 10-084132 (1998-03-01), None
patent: 2000-077783 (2000-03-01), None
patent: 2000-114599 (2000-04-01), None
patent: 2000-332295 (2000-11-01), None

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