Nitride semiconductor laser

Details Nitride semiconductor laser Nitride semiconductor laser

2005-05-10

2005-05-10

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S745000, C438S046000, C438S962000

Reexamination Certificate

active

06891268

ABSTRACT:
The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.

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