Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-03-25
2011-10-11
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S615000, C257SE29252
Reexamination Certificate
active
08035130
ABSTRACT:
The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0<x<1) formed on a substrate, an AlyGa1-yN barrier layer with a composition of Al being y (0<y≦1) formed on the channel layer, and source/drain electrodes and a gate electrode formed on the barrier layer, wherein the composition ratio y is larger than the composition ratio x.
REFERENCES:
patent: 2007/0045670 (2007-03-01), Kuraguchi
patent: 2007/0158683 (2007-07-01), Sheppard et al.
patent: 2010/0244041 (2010-09-01), Oishi et al.
patent: 2001-326232 (2001-11-01), None
patent: 2003-243423 (2003-08-01), None
patent: 2004-228481 (2004-08-01), None
patent: 2006-134935 (2006-05-01), None
patent: 2006-222160 (2006-08-01), None
patent: 2007-67240 (2007-03-01), None
Takuma Nanjo, et al.,“Remarkable Breakdown Voltage Enhancement in AlGaN Channel HEMTs”, IEDM 2007, Tech. Digest, 4 pages.
Yasuhiro Okamoto et al., “L-Band High Output AlGaN/GaN Hetero-junction FET on SiC Substrate”, Technical Report of IEICE, The Institute of Electronicl, Information and Communication Engineers, 2002, ED2002-94, 5 pages.
Abe Yuji
Nanjo Takuma
Oishi Toshiyuki
Suita Muneyoshi
Tokuda Yasunori
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Smoot Stephen W
LandOfFree
Nitride semiconductor heterojunction field effect transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride semiconductor heterojunction field effect transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor heterojunction field effect transistor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4262199