Nitride semiconductor element and method for production thereof

Details Nitride semiconductor element and method for production thereof Nitride semiconductor element and method for production thereof

2010-04-05

2011-11-15

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S094000, C257S099000, C257S103000, C257S778000, C257SE21499, C257SE21503, C257SE21511, C257SE21518, C257SE33001, C257SE33056, C257SE33057, C438S051000

Reexamination Certificate

active

08058639

ABSTRACT:
A light-emitting apparatus of the present invention includes: a mounting base260which has a wire265; and a nitride-based semiconductor light-emitting device flip-chip mounted on the mounting base260. The nitride-based semiconductor light-emitting device100includes a GaN-based substrate10which has an m-plane surface12, a semiconductor multilayer structure20provided on the m-plane surface12of the GaN-based substrate10, and an electrode30provided on the semiconductor multilayer structure20. The electrode30includes an Mg layer32. The Mg layer32is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure20. The electrode30is coupled to the wire265.

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