Nitride semiconductor element

Details Nitride semiconductor element Nitride semiconductor element

2006-12-05

2006-12-05

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

C257S014000, C257S744000

Reexamination Certificate

active

07145184

ABSTRACT:
A nitride semiconductor element exhibiting low leakage current and high ESD tolerance includes an active layer of nitride semiconductor that is interposed between a p-sided layer and an n-sided layer, which respectively consist of a plurality of nitride semiconductor layers, the p-side layer including a p-type contact layer as a layer for forming p-ohmic electrodes, the p-type contact layer being formed by laminating p-type nitride semiconductor layers and n-type nitride semiconductor layers in an alternate manner.

REFERENCES:
patent: 6657300 (2003-12-01), Goetz et al.
patent: 6872986 (2005-03-01), Fukuda et al.
patent: 1 063 711 (2000-12-01), None
patent: 11-150296 (1999-06-01), None
patent: 2000-101142 (2000-04-01), None
patent: 2000-232237 (2000-08-01), None
patent: 2001-148507 (2001-05-01), None
patent: WO 00/59046 (2000-03-01), None
Partial translation of EP 1063711 (Tanizawa), pp. 25 and 54-58, Mar. 2006.
Translation of International Preliminary Examination Report mailed Feb. 2, 2004 in corresponding PCT Application No. PCT/JP02/06706.

Affiliated with

Also associated with

Rating

Nitride semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3656118