Nitride semiconductor element

Details Nitride semiconductor element Nitride semiconductor element

2006-08-22

2006-08-22

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S013000, C257S086000, C257S094000, C257S099000, C257S103000

Reexamination Certificate

active

07095051

ABSTRACT:
In a nitride semiconductor device having an active layer12between a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is adopted in which an active layer12has at least a well layer11formed of a nitride semiconductor containing In and Al and a barrier layer2formed of a nitride semiconductor containing Al, whereby a laser device excellent in emitting efficacy at a short wavelength region is obtained. It is particularly preferable that said well layer1is formed of AlxInyGa1−x−yN (0<x≦1<0<y≦1, x+y<1) and said barrier layer2is formed of AluInvGa1−u−vN (0<u≦1, 0≦v≦1, u+v<1).Such a light emitting device is realized to obtain excellent efficacy in emitting light of short wavelength in a region of 380 nm.

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