Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-08-30
2011-08-30
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S015000, C257S017000, C257S022000, C257S079000, C257S103000, C257SE33008, C438S022000, C438S034000, C438S035000
Reexamination Certificate
active
08008647
ABSTRACT:
There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.
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Japanese Office Action, with English translation thereof, issued in Japanese Patent Application No. 2007-271364, dated Aug. 17, 2010.
Han Jae Woong
Kim Min Ho
Park Seong Eun
Gupta Raj
McDermott Will & Emery LLP
Nguyen Ha Tran T
Samsung LED Co., Ltd.
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