Nitride semiconductor device with a hole extraction electrode

Details Nitride semiconductor device with a hole extraction electrode Nitride semiconductor device with a hole extraction electrode

2006-08-22

2010-06-15

Pizarro, Marcos D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S020000, C257S024000, C257SE21395

Reexamination Certificate

active

07737467

ABSTRACT:
A nitride semiconductor device comprises: a laminated body; a first and second main electrode provided in a second and third region, respectively, adjacent to either end of the first region on the major surface of the laminated body; and a third main electrode. The laminated body includes a first semiconductor layer of a nitride semiconductor and a second semiconductor layer of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer, the second semiconductor layer being provided on the first semiconductor layer. The third main electrode is provided on the major surface of the laminated body and opposite to the control electrode across the second main electrode.

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