Nitride semiconductor device including a group III nitride...

Details Nitride semiconductor device including a group III nitride... Nitride semiconductor device including a group III nitride...

2008-07-25

2011-10-18

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29001

Reexamination Certificate

active

08039872

ABSTRACT:
A nitride semiconductor device according to the present invention includes a Group III nitride semiconductor; and an insulating film containing oxygen formed on the surface of the Group III nitride semiconductor, wherein the nitrogen concentration in a region provided with the insulating film is higher than the nitrogen concentration in a region not provided with the insulating film on the surface of the group III nitride semiconductor.

REFERENCES:
patent: 7491983 (2009-02-01), Otsuka et al.
patent: 2003/0082860 (2003-05-01), Yoshida et al.
patent: 2006/0065912 (2006-03-01), Beach
patent: 2003-163354 (2003-06-01), None

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