Nitride semiconductor device having current confining layer

Details Nitride semiconductor device having current confining layer Nitride semiconductor device having current confining layer

2009-09-10

2011-12-13

Kim, Jay C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S012000, C257S013000, C257S079000, C257S094000, C257S096000, C257S103000, C257S183000, C257S190000, C257SE33003, C257SE33005, C257SE33006, C257SE33011, C257SE33023, C257SE33025, C257SE33026, C257SE33027, C257SE33028, C257SE33031, C257SE33032, C257SE33033, C257SE33034

Reexamination Certificate

active

08076685

ABSTRACT:
A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. The current confining layer includes a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer is formed on and in contact with the first semiconductor layer and has a smaller lattice constant than that of the first semiconductor layer. The third semiconductor layer is formed on and in contact with the second semiconductor layer and has a lattice constant that is smaller than that of the first semiconductor layer and larger than that of the second semiconductor layer.

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