Nitride semiconductor device having a zinc-based substrate

Details Nitride semiconductor device having a zinc-based substrate Nitride semiconductor device having a zinc-based substrate

2011-07-12

2011-07-12

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S013000, C257S021000, C257S091000, C257S094000, C257SE33025, C257SE33028, C257SE33030, C257SE33033, C257SE33034

Reexamination Certificate

active

07977703

ABSTRACT:
A nitride semiconductor device includes a semiconductor substrate; a first nitride semiconductor layer provided on the semiconductor substrate; a mask layer having opening portions, provided on the first nitride semiconductor layer; a second nitride semiconductor layer selectively grown on the mask layer laterally from the opening portions; and a semiconductor lamination portion formed by laminating nitride semiconductor layers so as to form a semiconductor element on the second nitride semiconductor layer. The substrate may be made of a zinc-based compound, the first nitride semiconductor layer may be provided on, and in contact with, the substrate, and at least a substrate side of the first nitride semiconductor layer may be made of AlyGa1-yN (0.05≦y≦0.2). Additionally, the semiconductor element may be a light emitting layer in which case the mask layer may include a metal film provided on the first nitride semiconductor layer and an insulating film provided on the metal film.

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