Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-07-15
2010-12-28
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29249, C257SE29271
Reexamination Certificate
active
07859020
ABSTRACT:
A nitride semiconductor device includes a substrate, a stacked semiconductor structure formed over the substrate and including a electron channel layer of an undoped nitride semiconductor and an electron supplying layer of an n-type nitride semiconductor formed epitaxially over the electron channel layer, the n-type nitride semiconductor having an electron affinity smaller than an electron affinity of said undoped nitride semiconductor and a two-dimensional electron gas being formed in the electron channel layer along an interface to the electron supply layer, a gate electrode formed over the stacked semiconductor structure in correspondence to a channel region, and source and drain electrodes formed over the stacked semiconductor structure in ohmic contact therewith respectively at a first side and a second side of the gate electrode, the stacked semiconductor structure including, between the substrate and the electron channel layer, an n-type conductive layer and a barrier layer containing Al formed consecutively and epitaxially.
REFERENCES:
patent: 5568086 (1996-10-01), Schuss et al.
patent: 6531718 (2003-03-01), Inoue et al.
patent: 6696866 (2004-02-01), Mitzlaff
patent: 6992319 (2006-01-01), Fahimulla et al.
patent: 7352008 (2008-04-01), Kohn et al.
patent: 7592647 (2009-09-01), Nakata et al.
patent: 7638819 (2009-12-01), Kikkawa et al.
patent: 2001/0020700 (2001-09-01), Inoue et al.
patent: 2006/0197107 (2006-09-01), Kanamura et al.
patent: 2009/0045438 (2009-02-01), Inoue et al.
patent: 1463198 (2004-09-01), None
patent: 7-74552 (1995-03-01), None
patent: 8-330873 (1996-12-01), None
patent: 2000-252458 (2000-09-01), None
patent: 2001-196575 (2001-07-01), None
patent: 2004-047764 (2004-02-01), None
patent: 2006-147663 (2006-06-01), None
patent: 2008-251966 (2008-10-01), None
patent: 2009-26975 (2009-02-01), None
patent: 2007/077666 (2007-07-01), None
K. Kawai et al., “AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact”; Electronic Letters Mar. 10, 1998 vol. 34, No. 6.
Junichiro Nikaido et al., “A Highly Uniform and Reliable AlGaN/GaN HEMT”; www.gaasmantech.org/Digests2005/20005 papers 8.1.pdf., search made on Jun. 21, 2007.
Japanese Office Action dated Aug. 20, 2009, issued in corresponding Japanese Patent Application No. 2007-226594.
“German Office Action”, mailed by German Patent Office and corresponding to German application No. 10 2008 032 897.9 on Apr. 9, 2010, with English translation, 15 pages.
Imanishi Kenji
Kikkawa Toshihide
Fujitsu Limited
Fujitsu Patent Center
Hoang Quoc D
LandOfFree
Nitride semiconductor device, Doherty amplifier and drain... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride semiconductor device, Doherty amplifier and drain..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor device, Doherty amplifier and drain... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4200904