Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-03-06
2007-03-06
Andujaf, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S098000, C257SE33026, C257SE33027, C257SE33028
Reexamination Certificate
active
11052103
ABSTRACT:
The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
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Kim Dong Joon
Kim Je Won
Kim Sun Woon
Andujaf Leonardo
Lowe Hauptman & Berner LLP.
Rodela Eduardo A.
Samsung Electro-Mechanics Co. Ltd.
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