Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-09-05
2006-09-05
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257SE25019, C257SE25028, C977S759000
Reexamination Certificate
active
07102173
ABSTRACT:
Provided are a nitride semiconductor device and method of manufacturing the same. In the method, semiconductor nanorods are vertically grown on a substrate, and then a nitride semiconductor thin film is deposited on the substrate having the semiconductor nanorods. Accordingly, a high-quality nitride semiconductor thin film can be deposited on a variety of inexpensive, large-sized substrates. Also, because the nitride semiconductor thin film containing the semiconductor nanorods can easily emit light through openings between the nanorods, internal scattering can be greatly reduced. Thus, the nitride semiconductor thin film can be usefully employed in optical devices such as light emitting diodes and electronic devices.
REFERENCES:
patent: 2004/0079278 (2004-04-01), Kamins et al.
patent: 2004/0175844 (2004-09-01), Yang et al.
W.I. Park, et al., Metalorganic Vapor-Phase Epitaxial Growth of Vertically Well-Aligned ZnO Nanorods, Applied Physics Letter, vol. 80, No. 22, pp. 4232-4234 (2002).
An Sung Jin
Kim Yong Jin
Yi Gyu-Chul
Kebede Brook
Marshall & Gerstein & Borun LLP
Postech Foundation
Siltron Inc.
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