Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-07-26
2005-07-26
Elms, Richard (Department: 2824)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S481000, C438S681000, C117S095000
Reexamination Certificate
active
06921673
ABSTRACT:
Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion (11) formed on a sapphire substrate (10) and having a mask (12) on one side surface thereof, and a GaN layer (15) grown on the sapphire substrate (10) and the seed crystal portion (11) through epitaxial lateral overgrowth. The GaN layer (15) is grown only from an exposed side surface of the seed crystal portion (11) which is not covered with the mask (12), so the lateral growth of the GaN layer (15) is asymmetrically carried out. Thereby, a meeting portion (32) is formed in the vicinity of a boundary between the seed crystal portion (11) and the mask (12) in a thickness direction of the GaN layer (15). Therefore, as the meeting portion (32) is formed in a position away from the center between the adjacent seed crystal portions (11) in a direction parallel to a surface of the substrate, a width WLof a lateral growth region is larger with respect to a pitch WPof the seed crystal potion (11), compared with conventional configurations.
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Kobayashi Toshimasa
Nakajima Hiroshi
Yamaguchi Takashi
Yanashima Katsunori
Elms Richard
Luhrs Michael K.
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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