Nitride semiconductor device and method for fabricating the...

Details Nitride semiconductor device and method for fabricating the... Nitride semiconductor device and method for fabricating the...

2006-05-12

2009-10-20

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S087000

Reexamination Certificate

active

07606276

ABSTRACT:
A nitride semiconductor device100according to the present invention includes: an n-GaN substrate1; a semiconductor multilayer structure, which has been formed on the principal surface of the n-GaN substrate1and which includes a p-type region and an n-type region; a p-electrode32, which makes contact with a portion of the p-type region included in the semiconductor multilayer structure; and an n-electrode34, which is arranged on the bottom surface of the substrate1. The bottom surface of the substrate1includes a roughened region40aand a flattened region40b. And the n-electrode34covers the roughened region40aat least partially.

REFERENCES:
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patent: 2005/0030994 (2005-02-01), Kozaki et al.
patent: 2005/0184299 (2005-08-01), Matsumura et al.
patent: 2002-016312 (2002-01-01), None
patent: 2004-006718 (2004-01-01), None
patent: 2004-071657 (2004-03-01), None
patent: 2004-172568 (2004-06-01), None
International Search Report for corresponding Application No. PCT/JP2006/309550 mailed Jun. 6, 2006.
Form PCT/ISA/237for corresponding Application No. PCT/JP2006/309550 and a concise explanation.

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