Nitride semiconductor device and method for fabricating the...

Details Nitride semiconductor device and method for fabricating the... Nitride semiconductor device and method for fabricating the...

2006-05-22

2008-11-25

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C438S107000, C438S503000, C257SE21093, C257SE21366

Reexamination Certificate

active

07456034

ABSTRACT:
A nitride semiconductor device comprises: a well layer of nitride semiconductor containing In and Ga; barrier layers of nitride semiconductor sandwiching the well layer, containing Al and Ga, and having a larger band gap energy than the well layer; and a thin film layer provided between the well layer and the barrier layer. The thin film layer is formed during lowering of the substrate temperature after formation of the barrier layer or during elevation of the substrate temperature after formation of the well layer.

REFERENCES:
patent: 2002/0179923 (2002-12-01), Morita et al.
patent: 10-012922 (1998-01-01), None
patent: 10-135514 (1998-05-01), None
patent: 2002-043618 (2002-02-01), None
patent: 3304787 (2002-05-01), None

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