Nitride semiconductor device and method for fabricating the...

Details Nitride semiconductor device and method for fabricating the... Nitride semiconductor device and method for fabricating the...

2008-05-13

2008-05-13

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S046000, C438S458000, C257SE33056

Reexamination Certificate

active

11127656

ABSTRACT:
The present invention relates to a nitride semiconductor device and a method for fabricating the same. According to the present invention, there is an advantage in that trenches isolating respective nitride semiconductor unit devices from one another are filled with crack-inhibiting walls to remove voids, thereby minimizing cracks or damage that may occur in the nitride semiconductor unit devices during a laser lift-off process.In addition, there is an advantage in that the devices are bonded through a bonding-reinforcing plate or the crack-inhibiting walls to a carrier substrate with a bonding member coated thereon, thereby maintaining a strong bonding force to the carrier substrate.

REFERENCES:
patent: 5453405 (1995-09-01), Fan et al.
patent: 6613610 (2003-09-01), Iwafuchi et al.
patent: 2003/0189212 (2003-10-01), Yoo
patent: 2005/0042784 (2005-02-01), Yanagisawa et al.
patent: 2006/0163592 (2006-07-01), Tsai et al.

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