Nitride semiconductor device and manufacturing method thereof

Details Nitride semiconductor device and manufacturing method thereof Nitride semiconductor device and manufacturing method thereof

2006-03-17

2010-12-28

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

C438S042000, C438S044000

Reexamination Certificate

active

07858414

ABSTRACT:
A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor layer and a second substrate together and separating the nitride semiconductor layer and the first substrate from each other. With this manufacturing method, a nitride semiconductor device can be obtained with high yield.

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