Nitride semiconductor device and manufacturing method thereof

Details Nitride semiconductor device and manufacturing method thereof Nitride semiconductor device and manufacturing method thereof

2005-04-21

2009-12-22

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257SE29246, C257SE29253

Reexamination Certificate

active

07635877

ABSTRACT:
A nitride semiconductor device including an ohmic electrode with low contact resistance and manufacturing method thereof including a first nitride semiconductor layer made of a III-V group nitride semiconductor layer deposited on a substrate, a second nitride semiconductor layer including the III-V group nitride semiconductor layer whose film formation temperature is lower than that of the first nitride semiconductor layer and being deposited on the first nitride semiconductor layer and not including aluminum. An ohmic electrode is then formed through forming a metal pattern making ohmic contact on the second nitride semiconductor layer being unprocessed crystallinity with minute grains, and then heat treating the metal pattern.

REFERENCES:
patent: 5796132 (1998-08-01), Nakano et al.
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 6552373 (2003-04-01), Ando et al.
patent: 6787820 (2004-09-01), Inoue et al.
patent: 2003/0203604 (2003-10-01), Makita
patent: 2004/0155260 (2004-08-01), Kuzmik
patent: 2005/0258451 (2005-11-01), Saxler et al.
patent: 2006/0006413 (2006-01-01), Beach
patent: 10-335637 (1998-12-01), None
Lee et al. Characterization of GaN Schottky barrier photodetectors with a low-temperatrue GaN cap layer. Journal of Applied Physics. vol. 94, No. 3. (2003).
Y. Ohno, et al.; “International Conference on Nitride Semiconductor, Nara, 2003, Tu-P2.067” (p. 375).
The World Book Dictionary(A Thorndike-Barnhart Dictionary); vol. one A-K; Clarence L. Barnhart and Robert K. Barnhart; pp. 1-3, 1981.
Renaissance and Progress in Nitride Semiconductors; Isamu Akasaki; IPAP Conf. Series 1 pp. 1-6.

Affiliated with

Also associated with

Rating

Nitride semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4147400