Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2008-04-01
2008-04-01
Tran, Long K. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S103000, C257S029000, C257S029000, C257S029000, C438S167000, C438S172000
Reexamination Certificate
active
07352017
ABSTRACT:
A nitride semiconductor device enabiling to supress current collapse and manufacturing method thereof including a III-V group nitride semiconductor layer formed of III group elements includes at least one element from the group consisting of gallium, aluminum, boron and indium, and V group elements including at least nitrogen from the group consisting of nitrogen, phosphorous and arsenic, comprising a first nitride semiconductor layer made of said III-V group nitride semiconductor layer deposited on a substrate, a second nitride semiconductor layer comprising said III-V group nitride semiconductor layer and a control electrode making Schottky contact with the first nitride semiconductor layer being exposed through removing a portion of the second semiconductor layer.
REFERENCES:
patent: 2003/0203604 (2003-10-01), Makita
patent: 10-335637 (1998-12-01), None
Y. Ohno, et al.; “International Conference on Nitride Semiconductor, Nara, 2003, Tu-P2. 067” (p. 375).
Nakagawa Atsushi
Waki Eiji
Antonelli, Terry Stout & Kraus, LLP.
New Japan Radio Co. Ltd.
Tran Long K.
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